The Fundamental Concepts of Power Theories for Shingle- phase and Three-phase Voltages and Currents: Part 27 in a Series ofTutorials on Instrumentation and MeasurementWILLEMS, Jacques L.IEEE instrumentation & measurement magazine. 2010, Vol 13, Num 5, pp 37-44, issn 1094-6969, 8 p.Article

To the theory of I―V characteristics of the superlatticesBOROVITSKAYA, E. S; GENKIN, V. M.Solid state communications. 1983, Vol 46, Num 10, pp 769-771, issn 0038-1098Article

Position-sensitive photodetector with rectifying voltage-current characteristicsMEDVID', A; BLUMS, YU.Sensors and actuators. A, Physical. 1994, Vol 42, Num 1-3, pp 508-510, issn 0924-4247Conference Paper

Current-voltage relationship for a neutral membraneSESHADRI, M. S.Berichte der Bunsengesellschaft für Physikalische Chemie. 1985, Vol 89, Num 1, pp 93-97, issn 0005-9021Article

Negative resistance of semiconductor heterojunction diodes owing to transmission resonanceZOHTA, Y.Journal of applied physics. 1985, Vol 57, Num 6, pp 2334-2336, issn 0021-8979Article

Cylindrical hollow-anode dischargeMILJEVIC, V. I.Journal of applied physics. 1985, Vol 57, Num 9, pp 4482-4484, issn 0021-8979Article

Caractéristiques énergétiques des décharges dans l'atmosphère entre un électrolyte et une anode en cuivreGAJSIN, F. M; GIZATULLINA, F. A; KAMALOV, R. R et al.Fizika i himiâ obrabotki materialov. 1985, Num 4, pp 58-64, issn 0015-3214Article

IV curves of long annular Josephson junctionsDAVIDSON, A; PEDERSEN, N. F.Applied physics letters. 1984, Vol 44, Num 4, pp 465-467, issn 0003-6951Article

Schottky barrier ideality, real and imaginedHENISCH, H. K; RAHIMI, S; MOREAU, Y et al.Solid-state electronics. 1984, Vol 27, Num 11, pp 1033-1034, issn 0038-1101Article

The current-voltage characteristic of magnetron sputtering systemsWESTWOOD, W. D; MANIV, S; SCANLON, P. J et al.Journal of applied physics. 1983, Vol 54, Num 12, pp 6841-6846, issn 0021-8979Article

Processus transitoires dans les structures MOS et leur relation avec l'instabilité des caractéristiques électriques des composantsAGAFONOV, A. I; PLOTNIKOV, A. F; SELEZNEV, V. N et al.Žurnal tehničeskoj fiziki. 1983, Vol 53, Num 6, pp 1089-1095, issn 0044-4642Article

Forward blocking capability of double gate IGBTs at high temperaturesQIN HUANG; GEHAN AMARATUNGA.Solid-state electronics. 1995, Vol 38, Num 5, pp 981-982, issn 0038-1101Article

Current-voltage characteristics of ideal silicon diodes in the range 300-400KCAPPELLETTI, P; CEROFOLINI, G. F; POLIGNANO, M. L et al.Journal of applied physics. 1985, Vol 57, Num 2, pp 646-647, issn 0021-8979Article

Tunnel diode theoryLANDSBERG, P. T; ABRAHAMS, M. S.Electronics Letters. 1985, Vol 21, Num 2, pp 59-60, issn 0013-5194Article

Arc électrique d'un plasmatron à deux jets dans un champ magnétique variablePOLYAKOV, S. P; LIVITAN, N. V.Inženerno-fizičeskij žurnal. 1984, Vol 46, Num 3, pp 476-480, issn 0021-0285Article

Caractéristique tension-courant généralisé des plasmatrons à vapeur tourbillonnaireMIKHAJLOV, B. I.Inženerno-fizičeskij žurnal. 1984, Vol 46, Num 2, pp 325-326, issn 0021-0285Article

Electrical properties of (p)Te-(p)Si isotype heterojunctionMANSINGH, A; GARG, A. K.Journal of applied physics. 1984, Vol 56, Num 8, pp 2315-2322, issn 0021-8979Article

Stimulation de la supraconductivité par un courant constant en un contact supraconducteur-métal normal-supraconducteurLEMPITSKIJ, S. V.ZETF. Pis′ma v redakciû. 1983, Vol 85, Num 3, pp 1072-1080, issn 0044-4510Article

Properties of variable-thickness NbN microbridgesSAITO, Y; HOSAKA, S; SUGANOMATA, S et al.Journal of low temperature physics. 1983, Vol 50, Num 3-4, pp 311-317, issn 0022-2291Article

Zero field steps in short Josephson-junctionTAKANAKA, K; NAGASHIMA, T.Solid state communications. 1983, Vol 48, Num 9, pp 839-840, issn 0038-1098Article

Research on I-V temperature characteristic for InSb IRFPAGUO QIANG; LIU, Jun-Ming; WANG WEI et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8193, issn 0277-786X, isbn 978-0-8194-8834-3, 81932O.1-81932O.6, 2Conference Paper

Influences of voltage-current characteristic difference on quench development in low-Tc and high-Tc superconducting devices. (Review)VYSOTSKY, V. S; RAKHMANOV, A. L; ILYIN, Yu et al.Physica. C. Superconductivity and its applications. 2004, Vol 401, Num 1-4, pp 57-65, 9 p.Conference Paper

Measurement of I-V curves of silicon-on-insulator (SOI) MOSFET's without self-heatingJENKINS, K. A; SUN, J. Y.-C.IEEE electron device letters. 1995, Vol 16, Num 4, pp 145-147, issn 0741-3106Article

Current-voltage curves of bismuth at high current microsecond pulsesBOGOD, YU. A.Solid state communications. 1993, Vol 87, Num 12, pp 1159-1161, issn 0038-1098Article

Fabrication of a Bi-2212/Ag pancake coil generating 6000 G at 4.2 K in 12 TSHIMOYAMA, J; MORIMOTO, T; KITAGUCHI, H et al.Japanese journal of applied physics. 1992, Vol 31, Num 2B, pp L163-L165, issn 0021-4922, 2Article